貼片小信號MOS
Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
General Features
● VDS = -12V,ID = -9A RDS(ON) < 22mΩ @ VGS=-2.5V
RDS(ON) < 18mΩ @ VGS=-4.5V
● Advanced trench MOSFET process technology
● Ultra low on-resistance with low gate charge Application
● PWM applications
● Load switch
● Battery charge in cellular handset
地址：福州市倉山區(qū)浦上大道216號倉山萬達(dá)廣場C區(qū)SOHO區(qū)C4棟24層
電話：+86-0591-88081587/6/5（多線）
傳真：+86-0591-88081589
郵箱：
技術(shù)熱線：+86-0591-88081587/6/5（分機(jī)-811）